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- W2060668801 abstract "ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements." @default.
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- W2060668801 date "2011-01-24" @default.
- W2060668801 modified "2023-10-16" @default.
- W2060668801 title "ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection" @default.
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- W2060668801 doi "https://doi.org/10.1063/1.3551628" @default.
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