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• W2060783986 abstract "We present a simple and efficient approach to implement Schottky barrier contacts in a Multi-subband Monte Carlo simulator by using the subband smoothening technique to mimic tunneling at the Schottky junction. In the absence of scattering, simulation results for Schottky barrier MOSFETs are in agreement with ballistic Non-Equilibrium Green’s Functions calculations. We then include the most relevant scattering mechanisms, and apply the model to the study of double gate Schottky barrier MOSFETs representative of the ITRS 2015 high performance device. Results show that a Schottky barrier height of less than approximately 0.15 eV is required to outperform the doped source/drain structure." @default.
• W2060783986 created "2016-06-24" @default.
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• W2060783986 date "2013-01-01" @default.
• W2060783986 modified "2023-10-04" @default.
• W2060783986 title "Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model" @default.
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• W2060783986 doi "https://doi.org/10.1016/j.sse.2012.07.024" @default.
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