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- W2060806502 abstract "The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ~180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ~5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible." @default.
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- W2060806502 date "2009-10-01" @default.
- W2060806502 modified "2023-09-23" @default.
- W2060806502 title "Semi-Insulating Silicon for Microwave Devices" @default.
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- W2060806502 doi "https://doi.org/10.4028/www.scientific.net/ssp.156-158.101" @default.
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