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- W2060818046 abstract "We describe a new low-temperature clean for Si molecular beam epitaxy. Growth is carried out on Si wafers subjected to an ≊10–60 s clean in a buffered HF solution prior to insertion in the growth chamber. We demonstrate low defect densities (<105 cm−2) at 380 °C without either the conventional high-temperature cleaning step to desorb a chemical oxide or the use of a glovebox for chemical cleaning and transfer to the vacuum chamber. Wafers are given an ≊200 °C prebake in situ to remove hydrocarbons, and then raised to the growth temperature prior to deposition. For (100) substrates the transition from amorphous deposition to crystalline growth occurs at ≊370 °C, below the temperature at which hydrogen should desorb. On (111) the minimum temperature for epitaxy is ≊500 °C, as expected. We attribute this difference to the large number of undercoordinated Si atoms present on (100), which allows growth to take place even on the hydrogen-terminated surface. Secondary-ion mass spectrometry suggests that contamination levels at the substrate-epilayer interface using this HF dip are comparable to those for conventional (‘‘Shiraki’’) chemical oxide desorption techniques. Omission of the prebake step leads to a highly carbon-contaminated surface: this surface has the remarkable property that Si will grow epitaxially on it, but does not wet it (so that at high temperature Si/Si:C grows as islands)." @default.
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- W2060818046 date "1991-08-05" @default.
- W2060818046 modified "2023-09-24" @default.
- W2060818046 title "370 °C clean for Si molecular beam epitaxy using a HF dip" @default.
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- W2060818046 doi "https://doi.org/10.1063/1.105365" @default.
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