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• W2060821504 abstract "Display Omitted A post-growth treatment is performed on interfacial layer before high-k deposition.The treatment includes an IL desorption and a re-growth process.Both effective oxide thickness and simultaneously leakage current are decreased.The improvement can be attributed to interfacial layer with less defect. A post-growth treatment is performed on a chemical oxide interfacial layer (IL) before an atomic layer deposition formed high-k for MOSFETs in this work. The treatment includes an IL desorption with a high temperature annealing and a re-growth process with a H2O2 solution. The effective oxide thickness is scaled down and simultaneously the leakage current is decreased too. The improvement can be attributed to the high temperature desorption and the re-grown IL with fewer oxygen vacancies. In addition, a charge pumping technique is applied for interface and IL analyses. The charge pumping data are consistent with material analysis. The post-growth treatment is a novel approach to form an IL for ALD-formed high-k in MOS devices." @default.
• W2060821504 created "2016-06-24" @default.
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• W2060821504 date "2015-04-01" @default.
• W2060821504 modified "2023-09-22" @default.
• W2060821504 title "Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer" @default.
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• W2060821504 doi "https://doi.org/10.1016/j.mee.2015.02.028" @default.
• W2060821504 hasPublicationYear "2015" @default.
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