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- W2060829815 abstract "For the first time a detailed description of grown-in extended defects in highly Te-doped 〈111〉 CZ-grown GaSb single crystals is given. The nature and density of the defects is correlated with the local tellurium concentration. We observed prismatic dislocation loops with {110} and {111} habit planes (perfect or faulted loops) as the predominant defects, extended dislocation clusters consisting of climbed sessile perfect dislocations, and larger, often multi-layered planar defects with displacement fringe contrast (probably Ga2Te3 precipitates) lying in {111} lattice planes. While the prismatic dislocation loops are already generated at a tellurium concentration of 3×1018 cm-3, dislocation clusters and large planar defects first occur at a tellurium concentration of about 1×1019 cm-3. The prismatic loops and the planar defects are exclusively of extrinsic (interstitial) type. Altogether one can establish a far-reaching similarity with the defect population found in highly Te-doped GaAs. The mechanisms which lead to the formation of defects are discussed on the basis of concepts of the known behaviour of point defects in GaAs." @default.
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- W2060829815 date "1992-08-01" @default.
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- W2060829815 title "Characterization of extended defects in highly Te-doped 〈111〉 GaSb single crystals grown by the Czochralski technique" @default.
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- W2060829815 doi "https://doi.org/10.1016/0022-0248(92)90586-8" @default.
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