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- W2060850097 abstract "Abstract Various light emitting devices (LED) have been processed using Er/O- and Er/F-doped Si layered structures grown by molecular beam epitaxy (MBE) at low temperature. A comparative study has been carried out in order to provide more understanding of the electroluminescence (EL) excitation and de-excitation mechanisms in particular at a high injection current regime. Comparing the experimental results with model calculations the values of excitation cross section, σ ex , and effective Auger coefficient, C A , have been determined for various devices operated at different biases. Time-resolved EL measurements of these Er/O- and Er/F-doped MBE Si structures, using an experimental set-up with a time response of 200 ns, have been performed with different excitation conditions. Besides the spontaneous Er emission (∼700 μs), some fast EL decay processes associated with the Auger energy transfer via free carriers (∼4 μs), and the hot carrier effects (≲200 ns) have been identified." @default.
- W2060850097 created "2016-06-24" @default.
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- W2060850097 date "1998-12-01" @default.
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- W2060850097 title "1.54μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy" @default.
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- W2060850097 doi "https://doi.org/10.1016/s0022-2313(98)00117-3" @default.
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