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• W2060977904 abstract "Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure." @default.
• W2060977904 created "2016-06-24" @default.
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• W2060977904 date "2011-02-28" @default.
• W2060977904 modified "2023-09-27" @default.
• W2060977904 title "GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation" @default.
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• W2060977904 doi "https://doi.org/10.1080/02773813.2010.542399" @default.
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