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• W2061034929 abstract "An In 0.68 Ga 0.32 As thermophotovoltaic (TPV) cell on a compositionally nonmonotonically graded InAsP buffer with a band gap energy of 0.60 eV grown by metal–organic chemical vapor deposition (MOCVD) has been fabricated. The performance of the TPV device was greatly improved with optimized material growth, the use of an absorption layer of suitable width, and appropriate TiO 2 /SiO 2 antireflective coating design. Under standard AM1.5G spectra, the open circuit voltage ( V oc ) increases from 0.19 to 0.23 V, the short-circuit current density ( J sc ) increases from 43 to 56 mA/cm 2 , and the conversion efficiency increases from 5.31 to 8.06%. By illumination at a high intensity of 50 suns, a high conversion efficiency of 12.3% with a V oc of 0.35 V is reached." @default.
• W2061034929 created "2016-06-24" @default.
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• W2061034929 date "2013-10-25" @default.
• W2061034929 modified "2023-10-11" @default.
• W2061034929 title "Optimization of In_0.68Ga_0.32As Thermophotovoltaic Device Grown on Compositionally Nonmonotonically Graded InAsP Buffer by Metal–Organic Chemical Vapor Deposition" @default.
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• W2061034929 doi "https://doi.org/10.7567/jjap.52.116504" @default.
• W2061034929 hasPublicationYear "2013" @default.
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