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- W2061088061 abstract "Silicon spike-doped GaAs layers were grown with AP-MOVPE adding silane to the process gas for very short time. The Si incorporation was investigated in different growth regimes, e.g. with continuous growth and growth interruptions. The reproducibility of the doping levels was very good. Doped layers with a greater number of Si dopant spikes in a short distance exhibit nearly homogeneous carrier concentration profile and unexpectedly high mobility. By capacitance-voltage (C-V) measurements at different temperatures we demonstrate very abrupt doping profiles too. The FWHM of carrier concentration peaks of single layers has been found to be as low as 9 nm. The dopant concentration profile is dominated by thermal diffusion during the growth. Calculation of a diffusion broadened Gaussian dopant distribution indicates an initial concentration profile with a width less than 1 nm. This confirms published data about δ-doped structures grown with CBE. The results demonstrate the capability of AP-MOVPE to grow highly abrupt doped epitaxial layers." @default.
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- W2061088061 date "1991-01-01" @default.
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- W2061088061 title "Silicon spike-doping of GaAs with AP-MOVPE" @default.
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- W2061088061 doi "https://doi.org/10.1016/0022-0248(91)90467-j" @default.
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