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- W2061099421 abstract "The performance of organic thin film transistors (OTFTs) strongly depends on the surface states of the gate insulator. Top-contact (TC) OTFTs with modified gate insulator were demonstrated in this paper. The modified gate insulator layers consisted of SiO 2 as the gate insulator and OTS (octadecyltrichlorosilane) or PMMA (Poly (methyl methacylate)) as the modified layer. The devices with the modified layer had field-effect mobility larger than 10 -3 cm 2 / Vs , which was twice that of the untreated OTFT. The on/off current ratio was increased one order of magnitude and reached more than 10 4 . The leakage current was decreased from 10 -9 A to 10 -10 A. The results demonstrate that using modified gate insulators can obviously improve the performance of the OTFTs." @default.
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- W2061099421 date "2011-01-10" @default.
- W2061099421 modified "2023-09-22" @default.
- W2061099421 title "EFFECTS OF SURFACE-MODIFIED GATE INSULATOR ON THE ELECTRICAL CHARACTERISTICS OF ORGANIC THIN-FILM TRANSISTORS" @default.
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- W2061099421 doi "https://doi.org/10.1142/s021797921105669x" @default.
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