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• W2061204374 abstract "In EUV lithography mask production, one source of contaminants originates from the targets used tosputter material onto the substrates. In particular, silicon appears to produce more contamination on roughregions of the silicon target. The features were found to be triangular hillocks pointing in the direction ofthe incident beam. The aim of this research is to prevent this particle formation on the target and thuseventually on the substrate. Both Si and Ru targets were sputtered using different ion beam conditions tounderstand particle formation mechanisms on the target and explore the ion beam conditions that canmitigate particles. Additionally, SRIM was used to calculate sputtering yields to better understand themechanisms behind particle formation." @default.
• W2061204374 created "2016-06-24" @default.
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• W2061204374 date "2012-03-29" @default.
• W2061204374 modified "2023-09-26" @default.
• W2061204374 title "Origin of EUV mask blank defects from ion beam deposition" @default.
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• W2061204374 doi "https://doi.org/10.1117/12.916481" @default.
• W2061204374 hasPublicationYear "2012" @default.
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