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• W2061342011 abstract "We report the growth and characterization of thin (&lt;35nm) germanium-carbon alloy (Ge1−xCx) layers grown directly on Si by ultrahigh-vacuum chemical vapor deposition, with capacitance-voltage and leakage characteristics of the first high-κ/metal gate metal-oxide-semiconductor (MOS) capacitors fabricated on Ge1−xCx. The Ge1−xCx layers have an average C concentration of approximately 1at.% and were obtained using the reaction of CH3GeH3 and GeH4 at a deposition pressure of 5mTorr and growth temperature of 450°C. The Ge1−xCx films were characterized by secondary ion mass spectrometry, atomic force microscopy, x-ray diffraction, and cross-sectional transmission electron microscopy. A modified etch pit technique was used to calculate the threading dislocation density. The x-ray diffraction results showed that the Ge1−xCx layers were partially relaxed. The fabricated MOS capacitors exhibited well-behaved electrical characteristics, demonstrating the feasibility of Ge1−xCx layers on Si for future high-carrier-mobility MOS devices." @default.
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• W2061342011 date "2006-04-10" @default.
• W2061342011 modified "2023-10-15" @default.
• W2061342011 title "Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications" @default.
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• W2061342011 doi "https://doi.org/10.1063/1.2195008" @default.
• W2061342011 hasPublicationYear "2006" @default.
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