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• W2061492904 abstract "Plasma etching and ion implantation lead to changes of the electronic and thermal properties of semiconductor materials, which have been measured with the help of the modulated optical reflectance. Imaging based on modulated optical reflectance applied to control etching and ion implantation in the production of semiconductor devices is more efficient at higher modulation frequencies where both thermal waves and charge carrier waves contribute to the measured signal." @default.
• W2061492904 created "2016-06-24" @default.
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• W2061492904 date "1999-09-01" @default.
• W2061492904 modified "2023-09-27" @default.
• W2061492904 title "Plasma etching and ion implantation on silicon, characterized by laser-modulated optical reflectance" @default.
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• W2061492904 doi "https://doi.org/10.1016/s0257-8972(99)00309-6" @default.
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