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- W2061513976 abstract "Current-voltage-temperature (I–V–T) measurements of different metal-semiconductor diodes are carried out and the temperature dependence of the ideality factor and the Schottky barrier height of these diodes are studied using different approaches. Based on certain assumptions and previously proposed models, different diode parameters are extracted and their correlations show that the interface imperfection of a metal-semiconductor contact can contribute to these temperature dependences. Moreover, in this work, the Au/n-Si and Al/n-GaAs diodes are shown to have the most imperfect contact interface amongst the sample diodes." @default.
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- W2061513976 date "1995-12-16" @default.
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- W2061513976 title "Temperature dependence of the ideality factor of GaAs and Si schottky diodes" @default.
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- W2061513976 doi "https://doi.org/10.1002/pssa.2211520225" @default.
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