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- W2061520410 abstract "A fully integrated, silicon optical-switch technology is reported that demonstrates one picosecond sampling apertures when excited by a femtosecond laser. Fabrication of the polycrystalline silicon switch structure is accomplished with standard integrated circuit processing techniques to insure full compatibility with standard VLSI processes. Photoresist-masked, ion-beam irradiation is used to generate trapping sites in the photoconductive layer and tailor the switch on-time. Limited optimization of process parameters resulted in photoconductors demonstrating 3-dB measurement bandwidths over 100 GHz when used as sampling gates. A model for the device performance has been developed and is compared with experimental results. The optical switches were used in a high-speed sampling system to measure dispersive effects in striplines on a silicon wafer for the first time." @default.
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- W2061520410 date "1985-01-01" @default.
- W2061520410 modified "2023-09-25" @default.
- W2061520410 title "New integrated polysilicon photoconductor for ultrafast measurements on silicon" @default.
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- W2061520410 doi "https://doi.org/10.1109/iedm.1985.190907" @default.
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