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• W2061611953 startingPage "1807" @default.
• W2061611953 abstract "Tuning Semiconductor Dopants Dopants in semiconductors can alter their conductivity or introduce spin centers that alter their magnetic properties. Generally, the charge state of a dopant and field it creates are fixed. Lee and Gupta (p. 1807 , published online 9 December) studied Mn dopants in GaAs with a low-temperature scanning tunneling microscope (STM). Using the STM to position As vacancies at different distances from the Mn dopants revealed that the As vacancy tuned the local electrostatic field of the dopant." @default.
• W2061611953 created "2016-06-24" @default.
• W2061611953 creator A5022239986 @default.
• W2061611953 creator A5022711530 @default.
• W2061611953 date "2010-12-24" @default.
• W2061611953 modified "2023-10-18" @default.
• W2061611953 title "Tunable Field Control Over the Binding Energy of Single Dopants by a Charged Vacancy in GaAs" @default.
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• W2061611953 doi "https://doi.org/10.1126/science.1197434" @default.
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