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- W2061844299 abstract "Parameters determining the performance of the crystalline oxides zirconia (ZrO_2) and hafnia (HfO_2) as gate insulators in nanometric Si electronics are estimated via ab initio calculations of the energetics, dielectric properties, and band alignment of bulk and thin-film oxides on Si (001). With their large dielectric constants, stable and low-formation-energy interfaces, large valence offsets, and reasonable (though not optimal) conduction offsets (electron injection barriers), zirconia and hafnia appear to have a considerable potential as gate oxides for Si electronics." @default.
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- W2061844299 date "2002-12-09" @default.
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- W2061844299 title "Theoretical Evaluation of Zirconia and Hafnia as Gate Oxides for Si Microelectronics" @default.
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- W2061844299 doi "https://doi.org/10.1103/physrevlett.89.266101" @default.
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