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• W2061895572 abstract "A study of the carrier transport performance of our quantum well infrared photodetector (QWIP) is carried out in this work. AlGaAs/GaAs QWIP devices were fabricated and characterized. Carrier transport between adjacent quantum wells are modeled by both the tunneling and thermoexcitation effects. The strengths of the two transport effects are quite small (tunneling is small due to thick barrier and thermoexcitation is small due to the low device working temperature). However the thermoexcitation effect dominates in our QWIP devices and the thermally activated carriers transport across the optical active multiple quantum well (MQW) region in the three-dimensional drift-diffusion manner. At zero bias the energy band structure of our sample is almost at a condition of flat band. Due to the thick multiple quantum well region and the high doping levels in the contacts, the external bias largely applies linearly across the MQW region. Current increases with increasing bias and it becomes saturated when the drift velocity becomes saturated. The calculated dark current density agrees well with our experimental measurement. The photoexcited carrier density is almost independent of the external bias. The photocurrent increases with increasing bias because of the increasing drift velocity. It reaches its maximal when the drift velocity saturates and the current then decreases as the external bias further increases due to current continuity and charge conservation." @default.
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• W2061895572 date "2000-01-01" @default.
• W2061895572 modified "2023-09-28" @default.
• W2061895572 title "Thermoexcited and photoexcited carrier transports in a GaAs/AlGaAs quantum well infrared photodetector" @default.
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• W2061895572 doi "https://doi.org/10.1063/1.371891" @default.
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