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• W2062083669 abstract "Reported herein is a comprehensive and comparative study on NMOSFETs with HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.9 nm (Tinv~1.2 nm). Digital and analog performances as well as reliability characteristics are compared in detail. It is shown that HfLaSiON has a strong relationship with the interface characteristics due to low barrier height, while HfLaON with the bulk trap characteristics due to greater bulk trap density." @default.
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• W2062083669 date "2008-12-01" @default.
• W2062083669 modified "2023-10-18" @default.
• W2062083669 title "A comprehensive and comparative study of interface and bulk characteristics of nMOSETs with la-incorporated high-k dielectrics" @default.
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• W2062083669 doi "https://doi.org/10.1109/iedm.2008.4796627" @default.
• W2062083669 hasPublicationYear "2008" @default.
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