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• W2062254666 abstract "The reactivity of dissolved O2, a ubiquitous impurity in aqueous solutions, with H-terminated Si(111) surfaces was quantified using a new technique that exploits kinetic competition between an impurity and an etchant to produce impurity-concentration-dependent changes in the steady-state etch morphology. This method is applicable to any impurity that alters the etch morphology. The impurity-induced changes are quantified using scanning tunneling microscopy measurements and atomistic, concentration-dependent kinetic Monte Carlo simulations. The site-specific reactivity of O2(aq) is surprisingly anisotropic. Oxidation of the highly strained dihydride step site is 4 times faster than oxidation of the relatively unstrained monohydride step site. Both steps are 104 times more reactive than terrace sites. The observed site-specific reaction rates are highly correlated to local strain. FTIR measurements of the Si−H stretch vibration showed that dissolved O2 inserts O atoms into surface Si−Si back-bonds without removing the H-termination. Dissolved O2 does not attack Si−H bonds, because neither Si−H consumption nor silanol production is observed." @default.
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• W2062254666 date "2002-07-09" @default.
• W2062254666 modified "2023-09-27" @default.
• W2062254666 title "Measuring the Site-Specific Reactivity of Impurities: The Pronounced Effect of Dissolved Oxygen on Silicon Etching" @default.
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• W2062254666 doi "https://doi.org/10.1021/jp0207073" @default.
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