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- W2062294786 abstract "To improve thermal dissipation in silicon-on-insulator metal-oxide-semiconductor field-effect transistors (SOI MOSFETs), we recently proposed replacing the buried oxide with buried alumina, which offers higher thermal conductivity. However, because alumina is a high-k insulator, there is also a definite impact on the electrical properties, namely, coupling and short-channel effects. Our simulations show that the role of fringing fields is accentuated, leading to more severe drain-induced barrier lowering (DIBL)-like problems. The trade-off between the thermal merit and the electrical performance of very advanced SOI transistors is examined by comparing various MOS architectures. We conclude on the usefulness of a ground plane located underneath a relatively thin buried alumina." @default.
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- W2062294786 date "2004-01-01" @default.
- W2062294786 modified "2023-09-24" @default.
- W2062294786 title "SOI MOSFETs with Buried Alumina: Thermal and Electrical Aspects" @default.
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- W2062294786 doi "https://doi.org/10.1149/1.1652055" @default.
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