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• W2062337304 abstract "Read current fluctuation (ΔIread) due to random telegraph noise was measured from a cell in a NAND flash memory cell string, and its effect on threshold voltage fluctuation (ΔVth) was analyzed. Sixteen-level fluctuation (four traps) was observed in a 60-nm cell of a cell string (ΔIread/Iread of ~0.4). ΔIread increased with decreasing Lg, and ΔIread/Iread up to 0.75 was observed at 48 nm. ΔIread, ΔVth, and their relation were clearly analyzed with program/erase mode of a cell and pass cells in a string. Although ΔIread is largest when a read cell and pass cells are erased, ΔVth is largest when a read cell is erased and pass cells are programmed in a cell string. We also observed the specific noise amplitude under various conditions, such as the bit-line bias, the pass bias of unselected cells in the NAND strings, and the temperature." @default.
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• W2062337304 date "2011-01-01" @default.
• W2062337304 modified "2023-10-17" @default.
• W2062337304 title "Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String" @default.
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• W2062337304 doi "https://doi.org/10.1109/ted.2010.2088126" @default.
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