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- W2062371511 abstract "We have studied terahertz (THz) emission from InAs and GaAs in a magnetic field, and find that the emitted radiation is produced by coupled cyclotron-plasma charge oscillations. Ultrashort pulses of THz radiation were produced at semiconductor surfaces by photoexcitation with a femtosecond Ti-sapphire laser. We recorded the integrated THz power and the THz emission spectrum as a function of magnetic field at fields up to 5.5 T, and as function of temperature for $T=10--280mathrm{K}.$ The maximum observed THz power is $ensuremath{sim}1.6ifmmodetimeselsetexttimesfi{}{10}^{ensuremath{-}13}mathrm{J}/mathrm{p}mathrm{u}mathrm{l}mathrm{s}mathrm{e}$ (12 ensuremath{mu}W average power) from $nensuremath{-}mathrm{InAs}(1.8ifmmodetimeselsetexttimesfi{}{10}^{16}{mathrm{cm}}^{mathrm{ensuremath{-}}3})$ at $B=3.2mathrm{T}.$ We compare our results to semiclassical models of magnetoplasma oscillations of bulk free carriers and damped motion of free carriers in a two-dimensional electron gas. The bulk model describes THz emission from $nensuremath{-}mathrm{GaAs}$ at all magnetic fields, and InAs at $B=0.$ It fails to describe THz emission from InAs at nonzero magnetic fields. We show that a model including both bulk plasma oscillations and THz emission from a surface accumulation layer describes THz emission from InAs in a moderate magnetic field, but this model does not completely describe emission at fields $|B|g1.0mathrm{T}.$" @default.
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- W2062371511 date "2001-08-07" @default.
- W2062371511 modified "2023-09-26" @default.
- W2062371511 title "Terahertz emission from GaAs and InAs in a magnetic field" @default.
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- W2062371511 doi "https://doi.org/10.1103/physrevb.64.085202" @default.
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