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• W2062609780 abstract "Using low-frequency noise (LFN) analysis, we examined the quality of the semiconductor, oxide, and oxide–semiconductor interface of back-gated multilayer MoS2 transistors. We also investigated the mechanism of the LFN and extracted γ exponents from the LFN behavior, 1/fγ; the value of γ was &gt;1 at negative gate bias because of active slow traps. As VG increased, the slow traps were filled and thus γ decreased, stabilizing at ≈0.95. Various other parameters extracted from the LFN indicated that the carrier number fluctuation (Δn) model was the dominant origin of the LFN. The multilayer MoS2 structure had better noise immunity than a single-layer case in air." @default.
• W2062609780 created "2016-06-24" @default.
• W2062609780 creator A5039527129 @default.
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• W2062609780 date "2014-02-24" @default.
• W2062609780 modified "2023-10-18" @default.
• W2062609780 title "Analysis of flicker noise in two-dimensional multilayer MoS2 transistors" @default.
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• W2062609780 doi "https://doi.org/10.1063/1.4866785" @default.
• W2062609780 hasPublicationYear "2014" @default.
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