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• W2062651754 abstract "Impurity states in semiconductors, in which two long-lived ground states can be optically coupled to a single excited state, provide a powerful mechanism for applications including lasing without inversion, electromagnetically induced transparency, and optically addressable quantum memory for quantum information processing. We report low-threshold lasing from fluorine-doped ZnMgSe/ZnSe quantum wells in microdisk cavities. The lasing mechanism was studied by power-dependent photoluminescence spectroscopy. Lasing thresholds lower than 50 W cm−2 were observed and the fraction of spontaneous emission contributed to the lasing modes was about β=0.03–0.1." @default.
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• W2062651754 date "2009-02-01" @default.
• W2062651754 modified "2023-10-01" @default.
• W2062651754 title "Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions" @default.
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• W2062651754 doi "https://doi.org/10.1016/j.mejo.2008.07.014" @default.
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