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- W2062667799 abstract "TiO 2 and nitrogen-containing TiO 2 thin films were deposited on glass and silicon wafer substrates using a helicon-assisted reactive plasma sputtering process in a gas mixture of Ar/O 2 /N 2 . The growth mechanism, chemical composition and crystalline structure were probed by x-ray photoelectron spectroscopy, x-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopy. The presence of nitrogen in the film induces the formation of some Ti 3+ defects states, which introduces oxygen vacancies in the TiO x N y structure. It is also observed that nitrogen substitution selectively hinders the formation of the crystalline rutile phase and promotes the growth of a polycrystalline anatase phase film. Moreover, the film exhibits a red-shift in light absorption from UV to visible spectrum as a function of the nitrogen doping. This work shows that crystalline TiO 2 thin films can be obtained with a low temperature process and also shows that using nitrogen can control the desired crystalline structure." @default.
- W2062667799 created "2016-06-24" @default.
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- W2062667799 date "2011-10-28" @default.
- W2062667799 modified "2023-10-14" @default.
- W2062667799 title "Characterization of nanocrystalline nitrogen-containing titanium oxide obtained by N<sub>2</sub>/O<sub>2</sub>/Ar low-field helicon plasma sputtering" @default.
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- W2062667799 doi "https://doi.org/10.1088/0022-3727/44/45/455202" @default.
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