Matches in SemOpenAlex for { <https://semopenalex.org/work/W2062858438> ?p ?o ?g. }
Showing items 1 to 93 of
93
with 100 items per page.
- W2062858438 endingPage "1046" @default.
- W2062858438 startingPage "1039" @default.
- W2062858438 abstract "Abstract Bulk GaAs crystals were grown by synthesis solute diffusion (SSD) technique in a wide range of growth temperatures between 990 and 1150 °C. Electrical properties of these crystals were studied by means of van der Pauw, admittance spectroscopy, deep levels transient spectroscopy and photoinduced current spectroscopy techniques. It was shown that the main defects determining the properties were the GaAs antisites acceptors and the A center acceptors with the levels, respectively, Ev +0.078 eV and Ev +0.43 eV. The conductivity of the grown crystals was p-type and showed a pronounced maximum at a level of 104–105 Ω cm for growth temperatures between 1020 and 1080 °C. If the crystals were additionally compensated either by unintentional Si donors contamination from quartz crucibles or by intentional light Te doping one could get semi-insulating material with the room temperature resistivity higher than 106 Ω cm. The Fermi level in such crystals was pinned near Ec −0.8 eV, i.e. close to the EL2 donors. Measurements by deep levels transient spectroscopy on n-type doped crystals or by low frequency capacitance–voltage on semi-insulating crystals showed that the density of EL2 in these samples was in the low 1014 cm−3 and that thus the EL2 donors were not the main compensating agents." @default.
- W2062858438 created "2016-06-24" @default.
- W2062858438 creator A5016164016 @default.
- W2062858438 creator A5016479284 @default.
- W2062858438 creator A5025614608 @default.
- W2062858438 creator A5032974005 @default.
- W2062858438 creator A5034809830 @default.
- W2062858438 creator A5048126282 @default.
- W2062858438 creator A5054912783 @default.
- W2062858438 creator A5067413509 @default.
- W2062858438 creator A5071462492 @default.
- W2062858438 creator A5074717658 @default.
- W2062858438 date "2007-07-01" @default.
- W2062858438 modified "2023-10-01" @default.
- W2062858438 title "Synthesis solute diffusion growth of bulk GaAs: Effects of growth temperature and stoichiometry" @default.
- W2062858438 cites W192016692 @default.
- W2062858438 cites W1968108866 @default.
- W2062858438 cites W1982284272 @default.
- W2062858438 cites W1986135588 @default.
- W2062858438 cites W1989727606 @default.
- W2062858438 cites W1999190542 @default.
- W2062858438 cites W2005489498 @default.
- W2062858438 cites W2009252301 @default.
- W2062858438 cites W2009609429 @default.
- W2062858438 cites W2011243149 @default.
- W2062858438 cites W2026032408 @default.
- W2062858438 cites W2037122206 @default.
- W2062858438 cites W2049753146 @default.
- W2062858438 cites W2057021390 @default.
- W2062858438 cites W2058287733 @default.
- W2062858438 cites W2067038292 @default.
- W2062858438 cites W2069581679 @default.
- W2062858438 cites W2082120579 @default.
- W2062858438 cites W2118592892 @default.
- W2062858438 cites W2164271918 @default.
- W2062858438 cites W2478121256 @default.
- W2062858438 doi "https://doi.org/10.1016/j.sse.2007.05.005" @default.
- W2062858438 hasPublicationYear "2007" @default.
- W2062858438 type Work @default.
- W2062858438 sameAs 2062858438 @default.
- W2062858438 citedByCount "2" @default.
- W2062858438 countsByYear W20628584382013 @default.
- W2062858438 countsByYear W20628584382014 @default.
- W2062858438 crossrefType "journal-article" @default.
- W2062858438 hasAuthorship W2062858438A5016164016 @default.
- W2062858438 hasAuthorship W2062858438A5016479284 @default.
- W2062858438 hasAuthorship W2062858438A5025614608 @default.
- W2062858438 hasAuthorship W2062858438A5032974005 @default.
- W2062858438 hasAuthorship W2062858438A5034809830 @default.
- W2062858438 hasAuthorship W2062858438A5048126282 @default.
- W2062858438 hasAuthorship W2062858438A5054912783 @default.
- W2062858438 hasAuthorship W2062858438A5067413509 @default.
- W2062858438 hasAuthorship W2062858438A5071462492 @default.
- W2062858438 hasAuthorship W2062858438A5074717658 @default.
- W2062858438 hasConcept C121332964 @default.
- W2062858438 hasConcept C144082473 @default.
- W2062858438 hasConcept C147789679 @default.
- W2062858438 hasConcept C159467904 @default.
- W2062858438 hasConcept C185592680 @default.
- W2062858438 hasConcept C192562407 @default.
- W2062858438 hasConcept C26873012 @default.
- W2062858438 hasConcept C69357855 @default.
- W2062858438 hasConcept C97355855 @default.
- W2062858438 hasConceptScore W2062858438C121332964 @default.
- W2062858438 hasConceptScore W2062858438C144082473 @default.
- W2062858438 hasConceptScore W2062858438C147789679 @default.
- W2062858438 hasConceptScore W2062858438C159467904 @default.
- W2062858438 hasConceptScore W2062858438C185592680 @default.
- W2062858438 hasConceptScore W2062858438C192562407 @default.
- W2062858438 hasConceptScore W2062858438C26873012 @default.
- W2062858438 hasConceptScore W2062858438C69357855 @default.
- W2062858438 hasConceptScore W2062858438C97355855 @default.
- W2062858438 hasIssue "7" @default.
- W2062858438 hasLocation W20628584381 @default.
- W2062858438 hasOpenAccess W2062858438 @default.
- W2062858438 hasPrimaryLocation W20628584381 @default.
- W2062858438 hasRelatedWork W17462434 @default.
- W2062858438 hasRelatedWork W2004222375 @default.
- W2062858438 hasRelatedWork W2056591928 @default.
- W2062858438 hasRelatedWork W2382547628 @default.
- W2062858438 hasRelatedWork W2547939004 @default.
- W2062858438 hasRelatedWork W2899084033 @default.
- W2062858438 hasRelatedWork W2900840050 @default.
- W2062858438 hasRelatedWork W4238688585 @default.
- W2062858438 hasRelatedWork W4248579028 @default.
- W2062858438 hasRelatedWork W4294344620 @default.
- W2062858438 hasVolume "51" @default.
- W2062858438 isParatext "false" @default.
- W2062858438 isRetracted "false" @default.
- W2062858438 magId "2062858438" @default.
- W2062858438 workType "article" @default.