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- W2062862616 abstract "In this study, the disturbance characteristics of silicon–oxide–nitride–oxide–silicon (SONOS) memory based on the tunneling field-effect transistor (TFET) are investigated in terms of the Fowler–Nordheim (FN) program. Since the TFET SONOS memory uses a depletion channel region for program inhibition, the tunneling of an inhibited cell considers both the electron concentration and the vertical electric field. The effects of both parameters on tunneling current are analyzed using device simulation and the tunneling current equation. The tunneling current of the source-side region depends on the electric field and that of the drain-side region depends on the electron concentration. These results can be applied to the performance optimization of the TFET SONOS memory." @default.
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- W2062862616 date "2014-10-10" @default.
- W2062862616 modified "2023-09-26" @default.
- W2062862616 title "Disturbance characteristics of charge trap flash memory with tunneling field-effect transistor" @default.
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- W2062862616 doi "https://doi.org/10.7567/jjap.53.114201" @default.
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