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- W2062878867 abstract "We have studied the introduction of deep levels in InGaAs/InP multi-quantum wells (MQW) grown by metalorganic vapor phase epitaxy using tert-butylarsine (tBuAsH2) as arsenic precursor as well as chromium (bis-cyclopentadienyl chromium) and zinc (diethyl-zinc) as dopant elements able to promote recombination centres in the ternary alloy. We have utilized secondary-ion mass spectrometry to measure dopant concentrations and high-resolution X-ray diffraction for structural characterization. Particularly for the chromium-doped systems, frequency- and time-resolved optical spectroscopy of the MWQ ground-state transition confirms an increase of the carrier recombination rate upon an increase of defect density, while the electronic and structural properties of the sample are largely preserved." @default.
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- W2062878867 date "2003-02-01" @default.
- W2062878867 modified "2023-10-03" @default.
- W2062878867 title "High-quality, Cr-doped InGaAs/InP(001) MQWs grown by tert-butylarsine in a MOVPE apparatus" @default.
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- W2062878867 doi "https://doi.org/10.1016/s0022-0248(02)01851-1" @default.
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