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• W2062897923 abstract "In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model." @default.
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• W2062897923 date "2014-02-01" @default.
• W2062897923 modified "2023-10-05" @default.
• W2062897923 title "Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory" @default.
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• W2062897923 doi "https://doi.org/10.1109/led.2013.2295378" @default.
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