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- W2062907095 abstract "BiFeO3(BFO) and (Ba0.5, Sr0.5)TiO3(BST)-buffered BFO capacitors were deposited on Pt/Ti/SiO2/Si(100) substrates. The effect of the thickness of the BST buffer layer, which varied from 5 to 15 nm, and the structures and electrical properties were investigated. The structures, morphologies, and leakage currents are enhanced by the insertion of a BST buffer layer. As BST film thickness increases, the remnant polarizations (Pr) decreases and the polarization–electrical field (P-E) hysteresis curve changes. Retention properties were obtained only on BST-buffered BFO. In terms of retention behaviors, we found a more stretched exponential law dominated region during retention times with increasing BST film thickness. Attractive retention values of BST-buffered BFO are also shown. © 2011 The Electrochemical Society. [DOI: 10.1149/2.024111jes] All rights reserved." @default.
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- W2062907095 date "2011-01-01" @default.
- W2062907095 modified "2023-10-17" @default.
- W2062907095 title "Enhanced Characterizations of rf-Magnetron Sputtered BiFeO3 Thin Film Using (Ba0.5, Sr0.5)TiO3 Buffered Layer" @default.
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- W2062907095 doi "https://doi.org/10.1149/2.024111jes" @default.
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