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- W2062936327 abstract "Impurity doping of crystalline Si is one of the most striking techniques in semiconductor technology. A rigid and perfect crystalline lattice is prerequisite for effective doping. However, it has been reported to date that introducing a small amount of impurities drastically improves also the properties of amorphous materials. This paper reviews three pronounced doping effects on optical and electrical properties of amorphous oxides; i.e., (i) F-doping of silica glass to improve the vacuum-ultraviolet optical transmission and radiation toughness, (ii) codoping effects on solubility enhancement of rare earth ions in silica glass melt, and (iii) electron-carrier generation in transparent amorphous oxide semiconductors. It is emphasized that effectiveness of electron doping is determined by the magnitude of electron affinity and stabilization energy of a dopant. Importance of the local structure formed around a dopant ion and the location of conduction band minimum measured from the vacuum level is addressed to understand the doping effects in amorphous oxides." @default.
- W2062936327 created "2016-06-24" @default.
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- W2062936327 date "2012-01-01" @default.
- W2062936327 modified "2023-10-09" @default.
- W2062936327 title "Doping effects in amorphous oxides" @default.
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- W2062936327 doi "https://doi.org/10.2109/jcersj2.120.447" @default.
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