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- W2063121228 abstract "The flat band potential and the possible use of a Schottky barrier model for the description of the electrolyte/ZnSe interface indicate that in a large potential domain (vs. e.s.m.), ranging between −1.0 and +10.0 V, the semiconductor space charge region is a depletion layer. This fact enables the use of the electrolyte electroreflectance technique in the case of a fully depleted layer as an in situ method of study of the electrochemical behavior of zinc selenide. Over the electrode potential ranges between −1.0 and +6.0 V, the ZnSe decomposition gives soluble products and for potentials higher than +6.0 V the final result of the decomposition is the formation of a zinc oxide layer. The shape and energetic position of the electroreflectance spectra show that in the first case the ZnSe electrode surface remains unchanged whereas in the second case a surface transformation appears which is irreversible. These results correlate with data obtained in a purely electrochemical way. Die Lage des Flachbandpotentials und der Befund, die Phasengrenze Elektrolyt-ZnSe durch ein Schottky-Modell beschreiben zu können, zeigen auf, daß die Verarmungsschicht in der Raumladungszone sich über einen breiten Potentialbereich (vs. e.s.m.) hin erstreckt (von −1,0 bis 10,0 V). Dies ermöglicht das elektrolytische Verhalten des Halbleiters „in situ”︁ durch Elektroreflectance (E. R.) zu untersuchen: Von -1,0 bis +6,0 V geht ZnSe in Lösung unter Bildung löslicher Verbindungen; die zurückbleibende ZnSe-Oberfläche ist unverändert; bei Potentialen > +6,0 V erscheint eine Schicht von ZnO; es tritt eine irreversible Transformation ein. Die E.R.-Resultate sind identisch mit parallel geführten rein elektrochemischen Untersuchungen." @default.
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- W2063121228 date "1980-08-01" @default.
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- W2063121228 title "On the Use of Electroreflectance in the Interpretation of Anodic Electrochemical Behavior of the ZnSe Semiconductor Electrode" @default.
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- W2063121228 doi "https://doi.org/10.1002/bbpc.19800840820" @default.
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