Matches in SemOpenAlex for { <https://semopenalex.org/work/W2063357561> ?p ?o ?g. }
Showing items 1 to 84 of
84
with 100 items per page.
- W2063357561 endingPage "1415" @default.
- W2063357561 startingPage "1412" @default.
- W2063357561 abstract "This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator. SJ IGBT devices are more prone to latch-up than standard IGBTs due to the presence of a strong pnp transistor with the p layer serving as an effective collector of holes. The initial SJ LIGBT design latches at about 23 V with a gate voltage of 5 V with a forward voltage drop (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> ) of 2 V at 300 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . The latch-up current density is 1100 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . The latest SJ LIGBT design shows an increase in latch-up voltage close to 100 V without a significant penalty in V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> . The latest design shows a latch-up current density of 1195 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . The enhanced robustness against static latch-up leads to a better forward bias safe operating area." @default.
- W2063357561 created "2016-06-24" @default.
- W2063357561 creator A5011478102 @default.
- W2063357561 creator A5035967746 @default.
- W2063357561 creator A5041644858 @default.
- W2063357561 creator A5046378425 @default.
- W2063357561 creator A5066534887 @default.
- W2063357561 creator A5067135099 @default.
- W2063357561 creator A5071945889 @default.
- W2063357561 creator A5074298484 @default.
- W2063357561 date "2013-04-01" @default.
- W2063357561 modified "2023-09-26" @default.
- W2063357561 title "200 V Superjunction N-Type Lateral Insulated-Gate Bipolar Transistor With Improved Latch-Up Characteristics" @default.
- W2063357561 cites W1567082832 @default.
- W2063357561 cites W1966419152 @default.
- W2063357561 cites W2022756995 @default.
- W2063357561 cites W2076716483 @default.
- W2063357561 cites W2112902219 @default.
- W2063357561 cites W2121555810 @default.
- W2063357561 cites W2128854911 @default.
- W2063357561 cites W2136371633 @default.
- W2063357561 cites W2159961487 @default.
- W2063357561 cites W2162994368 @default.
- W2063357561 cites W2171063290 @default.
- W2063357561 cites W2171424669 @default.
- W2063357561 doi "https://doi.org/10.1109/ted.2013.2246165" @default.
- W2063357561 hasPublicationYear "2013" @default.
- W2063357561 type Work @default.
- W2063357561 sameAs 2063357561 @default.
- W2063357561 citedByCount "15" @default.
- W2063357561 countsByYear W20633575612015 @default.
- W2063357561 countsByYear W20633575612016 @default.
- W2063357561 countsByYear W20633575612017 @default.
- W2063357561 countsByYear W20633575612018 @default.
- W2063357561 countsByYear W20633575612019 @default.
- W2063357561 countsByYear W20633575612021 @default.
- W2063357561 countsByYear W20633575612022 @default.
- W2063357561 countsByYear W20633575612023 @default.
- W2063357561 crossrefType "journal-article" @default.
- W2063357561 hasAuthorship W2063357561A5011478102 @default.
- W2063357561 hasAuthorship W2063357561A5035967746 @default.
- W2063357561 hasAuthorship W2063357561A5041644858 @default.
- W2063357561 hasAuthorship W2063357561A5046378425 @default.
- W2063357561 hasAuthorship W2063357561A5066534887 @default.
- W2063357561 hasAuthorship W2063357561A5067135099 @default.
- W2063357561 hasAuthorship W2063357561A5071945889 @default.
- W2063357561 hasAuthorship W2063357561A5074298484 @default.
- W2063357561 hasConcept C119599485 @default.
- W2063357561 hasConcept C121332964 @default.
- W2063357561 hasConcept C127413603 @default.
- W2063357561 hasConcept C165801399 @default.
- W2063357561 hasConcept C172385210 @default.
- W2063357561 hasConcept C23061349 @default.
- W2063357561 hasConcept C28285623 @default.
- W2063357561 hasConcept C49040817 @default.
- W2063357561 hasConceptScore W2063357561C119599485 @default.
- W2063357561 hasConceptScore W2063357561C121332964 @default.
- W2063357561 hasConceptScore W2063357561C127413603 @default.
- W2063357561 hasConceptScore W2063357561C165801399 @default.
- W2063357561 hasConceptScore W2063357561C172385210 @default.
- W2063357561 hasConceptScore W2063357561C23061349 @default.
- W2063357561 hasConceptScore W2063357561C28285623 @default.
- W2063357561 hasConceptScore W2063357561C49040817 @default.
- W2063357561 hasIssue "4" @default.
- W2063357561 hasLocation W20633575611 @default.
- W2063357561 hasOpenAccess W2063357561 @default.
- W2063357561 hasPrimaryLocation W20633575611 @default.
- W2063357561 hasRelatedWork W1981075916 @default.
- W2063357561 hasRelatedWork W2002568568 @default.
- W2063357561 hasRelatedWork W2065467474 @default.
- W2063357561 hasRelatedWork W2129890820 @default.
- W2063357561 hasRelatedWork W2146714001 @default.
- W2063357561 hasRelatedWork W2159355921 @default.
- W2063357561 hasRelatedWork W2411103916 @default.
- W2063357561 hasRelatedWork W2498382600 @default.
- W2063357561 hasRelatedWork W3023896308 @default.
- W2063357561 hasRelatedWork W3180861533 @default.
- W2063357561 hasVolume "60" @default.
- W2063357561 isParatext "false" @default.
- W2063357561 isRetracted "false" @default.
- W2063357561 magId "2063357561" @default.
- W2063357561 workType "article" @default.