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• W2063369003 abstract "Pt/BiFeO3/ITO devices with nonvolatile bipolar resistive switching characteristic have been fabricated by chemical solution deposition. When applying the positive bias on Pt top electrodes, both bipolar and unipolar resistive switching can be observed after a forming process; however, when applying the negative bias, no forming and resistive switching but a rectifying diode-like effect can be found. This behavior has been analyzed by current conduction in detail, and then can be understood in terms of conductive filament mechanism with considering Schottky effect at BiFeO3/ITO interface." @default.
• W2063369003 created "2016-06-24" @default.
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• W2063369003 date "2014-07-01" @default.
• W2063369003 modified "2023-09-25" @default.
• W2063369003 title "Resistive switching and Schottky diode-like behaviors in Pt/BiFeO3/ITO devices" @default.
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• W2063369003 doi "https://doi.org/10.1016/j.jallcom.2014.02.180" @default.
• W2063369003 hasPublicationYear "2014" @default.
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