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- W2063374987 abstract "Laser annealing is an ideal activation step for ultra shallow junctions (USJ). But it can increase the density of interface traps (D <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</inf> ) of the gate dielectric, resulting in degraded NBTI reliability. Therefore the influence of anneal conditions is studied with corona charge metrology. SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> is used as a reference gate dielectric for which recovery solutions are worked out to reduce the laser induced D <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</inf> . But, on the other hand, the recovery can cause degradation of the USJ, limiting the choice of process conditions for recovery. The reduction in D <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</inf> by spike anneal can be explained by stress relaxation in case of SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> and SiON. For HiK gate dielectrics the behaviour is more complex due to possible chemical interactions and crystallization. Recovery can be done by spike anneal and mulitscan laser anneal. The latter is better towards USJ properties." @default.
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- W2063374987 date "2008-09-01" @default.
- W2063374987 modified "2023-09-30" @default.
- W2063374987 title "Control of laser induced interface traps with in-line corona charge metrology" @default.
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- W2063374987 doi "https://doi.org/10.1109/rtp.2008.4690551" @default.
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