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- W2063505794 abstract "Using the same device processing GaN-based High Electron Mobility Transistors (HEMTs) with 90nm T-shaped gate are fabricated on the AlGaN/GaN heterostuctures epitaxially grown on sapphire and SiC substrate, respectively. The DC outputs/transfer and RF characteristics are measured and compared. It's found that the sheet carrier density and electron mobility of AlGaN/GaN heterostucture on SiC substrate are both much higher than the ones on sapphire substrate, indicating better crystal quality for the one on SiC substrate. Moreover, attributed to the better crystal quality and higher thermal conductivity of SiC, the maximum peak transconductance, current gain cut-off frequency (f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> ) and maximum oscillation frequency (f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> ) of AlGaN/GaN HEMT on SiC substrate are much larger than the ones of AlGaN/GaN HEMT on sapphire substrate, respectively." @default.
- W2063505794 created "2016-06-24" @default.
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- W2063505794 date "2014-08-01" @default.
- W2063505794 modified "2023-09-26" @default.
- W2063505794 title "Influence of substrate on the RF-related electric characteristics for W-band AlGaN/GaN HEMTs" @default.
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- W2063505794 doi "https://doi.org/10.1109/ursigass.2014.6929448" @default.
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