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- W2063511994 abstract "We report that industrially qualified SbTe chalcogenide film can be applied to programmable metallization cell memory switching device. To fabricate the switching device, Sb35Te65, Ag, and W (top electrode) were consequently sputtered on TiW (bottom electrode)/SiO2∕Si substrate, and Ag diffusion process was not added. During Ag sputtering, it is apparent that Ag is diffused into Sb35Te65 film to form Ag-doped Sb35Te65 solid electrolyte, and that some of the diffused Ag reacts with Te to form Ag–Te bond in the solid electrolyte." @default.
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- W2063511994 date "2007-10-15" @default.
- W2063511994 modified "2023-10-16" @default.
- W2063511994 title "Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte" @default.
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- W2063511994 doi "https://doi.org/10.1063/1.2789663" @default.
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