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- W2063610634 abstract "A SiO 2 -covered p-type Si wafer 76 mm in diameter was irradiated by a focused electron beam of 30 keV. The resistivity of the wafer was 1 mΩm, and the SiO 2 layer formed by the wet oxidation process was 360 nm thick. Four electron dosages were used: 2×10 -7 , 5×10 -7 , 1×10 -6 and 5×10 -6 C/cm 2 . After the electron beam irradiation, the surface photovoltage was found to increase in accordance with the dosage, though a photovoltage increment was hardly observed with a 2×10 -7 C/cm 2 . This phenomenon was caused by the increment of positive surface charges that came about as a result of the interface states formed by the electron beam irradiation." @default.
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- W2063610634 date "1982-09-01" @default.
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- W2063610634 title "Electron Beam Enhanced Surface Photovoltage" @default.
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- W2063610634 doi "https://doi.org/10.1143/jjap.21.l555" @default.
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