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• W2063732269 abstract "Nominally undoped GaN films were grown by metalorganic chemical vapor deposition under three different conditions, namely (1) “standard” growth conditions with growth temperature of 1000 °C and growth rate of 1 μm/h, (2) slightly reduced growth temperature of 975 °C, and (3) standard temperature, but higher growth rate of 2.5 μm/h. The standard sample had a net donor density &lt;1015 cm−3, while the two other samples were semi-insulating, with sheet resistivity ∼1014 Ω/square and the Fermi level pinned at Ec−0.8 eV for the low temperature growth and at Ec−0.9 eV for the high growth rate conditions. The photoconductivity spectra of both of these latter samples show the presence of centers with optical threshold near 1.35 eV commonly attributed to C interstitials and centers with optical threshold near 2.7–2.8 eV and 3 eV often associated with C-related defects. However, no signals that could be attributed to substitutional C acceptors and C donors were detected. Current relaxation spectroscopy revealed deep traps with activation energies 0.2, 0.25, 045, and 0.8 eV. Annealing at 800 °C increased the concentration of these traps. The changes in resistivity induced by annealing in the high-growth rate sample were much stronger than for the low-temperature sample. The authors also observed a strong suppression of the yellow luminescence band intensity in the “standard” sample after annealing, as opposed to a slight increase of this band intensity in the two semi-insulating samples. The role of compensation by native defects and by deep levels related to carbon in the observed changes is discussed." @default.
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• W2063732269 date "2013-09-01" @default.
• W2063732269 modified "2023-10-16" @default.
• W2063732269 title "Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition" @default.
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• W2063732269 doi "https://doi.org/10.1116/1.4820905" @default.
• W2063732269 hasPublicationYear "2013" @default.
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