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- W2063870053 abstract "Previous research has attributed the fatigue susceptibility of silicon films to the sequential oxidation of the silicon and environmentally-assisted crack growth solely within the SiO<sub>2</sub> surface layer. This “reaction-layer fatigue” mechanism is only significant in thin films where the critical crack size for catastrophic failure can be reached by a crack growing within the oxide layer. Fracture mechanics analyses can provide important insight into the limitations of structural silicon films. In this paper, our current understanding of the reaction-layer fatigue mechanism will be reviewed. Current results suggest that surface oxide layer thicknesses as low as 10-20 nm may induce reaction-layer fatigue when considering failure of the specimen for a crack reaching the silica/silicon interface. In contrast, 3-fold thicker surface oxide layers are required for failure due to a crack <i>within</i> the oxide layer." @default.
- W2063870053 created "2016-06-24" @default.
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- W2063870053 date "2004-01-24" @default.
- W2063870053 modified "2023-09-23" @default.
- W2063870053 title "Reaction-layer fatigue: understanding the limitations of structural silicon" @default.
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- W2063870053 doi "https://doi.org/10.1117/12.527465" @default.
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