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- W2063880785 abstract "Thin films of CdSe vacuum-deposited on Si, SiO2 or Al2O3 have been implanted with 50 keV Cr, Ar and Ne ions at doses up to 4×1016 ions cm−2, and changes in the film composition have been monitored by Rutherford backscattering. For films deposited on SiO2, the results are consistent with the presence of approximately one monolayer of Se at the interface between the substrate and stoichiometric CdSe film in the as-deposited samples; Ar implantation sputters equal numbers of Cd and Se atoms. The same excess monolayer of Se is present in films deposited on Al2O3, but Cr implantation results in an increase in the Se excess. Films deposited on Si substrates have more than one monolayer of excess Se and behave differently with Ar implantation. The presence of Se interfacial layers could have important effects on the performance of CdSe thin film transistors." @default.
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- W2063880785 date "1981-04-01" @default.
- W2063880785 modified "2023-09-27" @default.
- W2063880785 title "Cd depletion in ion implanted thin film CdSe" @default.
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- W2063880785 doi "https://doi.org/10.1016/0029-554x(81)90697-2" @default.
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