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- W2063921887 abstract "Very high quality AlN epitaxially grown on (0001) sapphire by metal-organic vapor phase epitaxy is investigated by atomic force microscopy, x-ray diffraction, and photospectrometry. A clear and continuously linear step-flow pattern with sawtooth shaped terrace edges is observed in atomic force microscopic images. Triple-axis x-ray rocking curves show a full width at half maximum of 11.5 and 14.5arcsec for the (002) and (004) reflections, respectively. KOH etching reveals an etch-pit density of 2×107cm−2, as deduced from atomic force microscopy measurements. The optical transmission spectrum shows a sharp absorption edge with a band gap energy of 6.10eV." @default.
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- W2063921887 date "2006-09-04" @default.
- W2063921887 modified "2023-09-25" @default.
- W2063921887 title "Very high quality AlN grown on (0001) sapphire by metal-organic vapor phase epitaxy" @default.
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- W2063921887 doi "https://doi.org/10.1063/1.2345256" @default.
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