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• W2063925257 abstract "By an extensive micro-Raman study, oval-defect-related morphological, compositional and carrier concentration inhomogeneities were studied in MBE-grown GaAs and epitaxial layers. It was found that the crystalline morphology changes from point to point in the same defect. Though the films remain in a rather good crystalline state, the defects are shown to induce stress/strain in these films. The carrier concentration at the oval defects was also found to be less than at the epitaxial layers." @default.
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• W2063925257 date "1996-03-01" @default.
• W2063925257 modified "2023-09-22" @default.
• W2063925257 title "Inhomogeneities in MBE-grown : a micro-Raman study" @default.
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• W2063925257 doi "https://doi.org/10.1088/0268-1242/11/3/008" @default.
• W2063925257 hasPublicationYear "1996" @default.
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