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• W2063928644 abstract "Carbon doping in InAlAs by metalorganic chemical vapor deposition (MOCVD) is reported for the first time. The growth rate is found to decrease with increasing CBr4 flow due to the etching effect. Annealing in N2 at 450°C for 5 min. is confirmed to be sufficient for reactivating the hydrogenated C acceptors in InAlAs. Although the existence of residual donors and the hydrogenation have considerable influences on the hole concentration, the acceptor incorporation rate in InAlAs is revealed to be proportional to the CBr4 flow rate. The highest hole concentration ever achieved in MOCVD-grown InAlAs of 7 × 1018/cm3 demonstrates the promise of C as a p-type dopant in InAlAs." @default.
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• W2063928644 date "1997-04-01" @default.
• W2063928644 modified "2023-09-27" @default.
• W2063928644 title "Carbon doping in InAlAs grown by metalorganic chemical vapor deposition" @default.
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• W2063928644 doi "https://doi.org/10.1016/s0022-0248(96)00899-8" @default.
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