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• W2063973145 abstract "A systematic investigation on Mg doped and undoped InGaN epilayers grown by plasma-assisted molecular beam epitaxy has been conducted. Single phase InGaN alloys across the entire composition range were synthesized and Mg was doped into InxGa1−xN (0.1 ≤ x ≤ 0.88) epilayers up to ∼1020/cm3. Hall effect, thermopower, and electrochemical capacitance voltage experimental results demonstrate the realization of p-type InGaN across the entire alloy composition range for properly Mg doped InGaN. Hole densities have been measured or estimated to be in the lower ∼1018/cm3 range when the net acceptor concentrations are in the lower ∼1019/cm3 range across the composition range." @default.
• W2063973145 created "2016-06-24" @default.
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• W2063973145 date "2013-03-11" @default.
• W2063973145 modified "2023-10-18" @default.
• W2063973145 title "P-type InGaN across the entire alloy composition range" @default.
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• W2063973145 doi "https://doi.org/10.1063/1.4795718" @default.
• W2063973145 hasPublicationYear "2013" @default.
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