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• W2063999625 abstract "Metal nanowire formation and annihilation are controlled using a solid electrochemical reaction simply by applying a bias voltage to an ionic conductor, such as Ag2S and Cu2S. This controlled formation and annihilation of a metal nanowire can be achieved both on the surface of the ionic conductor and inside of the ionic conductor, by placing a counter electrode with a gap and without a gap between the ionic conductor, respectively. A new type of a nanodevice called “Atomic Switch” has been developed using the controlled formation and annihilation of a nanowire. It shows novel characteristics, such as easy operation, simple structure, low power consumption. Recent development of an atomic switch using a metal oxide enables to integrate it with CMOS devices." @default.
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• W2063999625 date "2009-01-01" @default.
• W2063999625 modified "2023-10-17" @default.
• W2063999625 title "Metal Nanowire Formation by Solid-Electrochemical Reaction and Its Device Application" @default.
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• W2063999625 doi "https://doi.org/10.3131/jvsj2.52.340" @default.
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