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- W2064004687 abstract "The influence of long-range potential fluctuations (LRPF) on the optical and electrical properties of hydrogenated amorphous silicon (a-Si:H) has been discussed for more than three decades. Traditionally, the single-electron spectrum N(E) of a-Si:H materials has been assumed to be determined by the short-range atomic order. In the present study, a semiempirical adiabatic model for the quantitative description of the N(E) dependence on the LRPF geometry is developed. Formation of morphological features such as columns or cones leads to the appearance of LRPFs as a result of the simultaneous long-range spatial confinement of all longitudinal branches of the acoustic thermal and ‘frozen-in’ phonons. The Gibbs grand canonical distribution and the local equilibrium assumption are used to describe the statistical properties of the confined disorders. Within the model, the formula derived for the single-electron spectrum reproduces both the ‘algebraic’ and exponential N(E) subranges observed experimentally. The parameters characterizing the simulated N(E) dependencies are found to be typical of ‘device-quality’ a-Si:H materials at the LRPF spatial extent of the order of 1 μm." @default.
- W2064004687 created "2016-06-24" @default.
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- W2064004687 date "2003-09-01" @default.
- W2064004687 modified "2023-10-01" @default.
- W2064004687 title "The long-range ordering, electron spectrum, and properties of amorphous silicon films – I. The generalized Skettrup model" @default.
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- W2064004687 doi "https://doi.org/10.1016/s0921-4526(03)00425-3" @default.
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