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• W2064040529 abstract "A kinetic model of the plasma-etching process has been developed to describe the etching of Si and SiO2 in CnFm/O2 and CnFm/H2 plasmas (CnFm ≡CF4, C2F6). The model has obtained good agreement with experiment for demonstrating the selective etching of SiO2 in CnFm/H2 plasmas, and the enhancement of the etch rate of Si in CnFm/O2 plasmas. Good agreement is also obtained with mass spectroscopic measurements of neutral species from a CF4/H2 plasma. Results from the model indicate that the adsorption of atomic hydrogen on silicon surfaces from CnFm/H2 plasmas, which then reacts with adsorbed fluorine, can significantly effect the selectivity of etching SiO2 with respect to Si. Similarly, the adsorption of atomic oxygen, which then reacts with adsorbed carbon thereby cleansing the surface, may be responsible for the large etch rates of Si seen in CnFm/O2 plasmas. The selectivity of etching SiO2 in CnFm/H2 plasmas has been found to be a sensitive function of the C/F ratio of the carbon-bearing molecules which desorb from the surface, and a C/F ratio of 0.5 shows best agreement with experiment. Results from the model favor ion drift as a dominant mechanism by which radicals are transported to the surface." @default.
• W2064040529 created "2016-06-24" @default.
• W2064040529 creator A5009306289 @default.
• W2064040529 date "1982-04-01" @default.
• W2064040529 modified "2023-10-16" @default.
• W2064040529 title "A kinetic study of the plasma‐etching process. I. A model for the etching of Si and SiO₂in C_<i>n</i>F_<i>m</i>/H₂and C_<i>n</i>F_<i>m</i>/O₂plasmas" @default.
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• W2064040529 doi "https://doi.org/10.1063/1.331074" @default.
• W2064040529 hasPublicationYear "1982" @default.
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